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Ordering number:EN6419
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
CPH6801
DC/DC Converter Applications
Features
* The CPH6801 consists of a P-channel MOSFET that features low ON resistance, ultrahigh-speed switching, and low-voltage drive, and a shottky barrier diode that features short reverse recovery time and low forward voltage, therefore enabling high-density mounting. * Each device incorporated in the CPH6801 is equivalent with the 2SJ560 and the SBS004, respectively.
Package Dimensions
unit:mm 2172
[CPH6801]
6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15
1
2
3 0.95 0.2
0.6
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Symbol Conditions
0.4
1 : Gate 2 : Source 3 : Anode 4 : Drain (Cathode Common) 5 : Drain (Cathode Common) 6 : Drain (Cathode Common) SANYO : CPH6
0.7 0.9
Ratings -20 10 -1 -4 0.9 150 -55 to +125 15 15 1 10 -55 to +125 -55 to +125
Unit V V A A W
C C
Mounted on a ceramic board (600mm2x0.8mm)
V V A A
C C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2492 No.6419-1/5
CPH6801
Electrical Characteristics at Ta = 25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF1 VF2 IR C trr Rthj-a IR=1mA IF=0.5A IF=1A VR=6V VR=10V, f=1MHz cycle IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2x0.8mm) 42 15 110 15 0.30 0.35 0.35 0.40 500 V V V A pF ns C/W V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-500mA ID=-500mA, VGS=-4V ID=-300mA, VGS=-2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-10V, VGS=-10V, ID=1.0A VDS=-10V, VGS=-10V, ID=1.0A VDS=-10V, VGS=-10V, ID=1.0A IS=-1.0A, VGS=0 -0.4 1.0 1.4 420 630 100 60 25 10 25 27 32 5 1 1 -0.9 -1.5 550 890 -20 -10 10 -1.4 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Marking : QB
Electrical Connection (Top view)
Cathode Common D D D
G
S
A
Switching Time Test Circuit
[MOSFET]
VDD=--10V VIN 0V --4V VIN PW=10s D.C.1% ID=--500mA RL=20
trr Test Circuit
[SBD]
Duty10%
10s P.G 50 CPH6801
S
--5V
100mA
G
50
100
10
trr
10mA
D
VOUT
100mA
No.6419-2/5
CPH6801
--1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0
ID -- VDS
--1 0.0 V
--6 .0V --4 .0V
--8.0V
[MOSFET]
--3 .0V
--3.0
ID -- VGS
VDS=--10V
[MOSFET]
--2.5
Ta= --25 C
0 --0.5 --1.0 --1.5 --2.0 --2.5
Drain Current, ID - A
Drain Current, ID - A
V --2.5
--2.0
--2.0V
--1.0
--0.5
VGS=--1.5V
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --3.0 --3.5 --4.0
Drain-to-Source Voltage, VDS - V
1000 900
IT00780 1000 900
Gate-to-Source Voltage, VGS - V
75
--1.5
C
2 5 C
IT00781
RDS(on) -- VGS
[MOSFET] Ta=25C
RDS(on) -- Ta
.5V
[MOSFET]
Static Drain-to-Source On-State Resistance, RDS (on) - m
Static Drain-to-Source On-State Resistance, RDS (on) - m
800 700 600 500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
800 700 600 500 400 300 200 100 0 --60 --40 --20 0 20 40
ID=--300mA --500mA
--3 I D=
00m
--2 S= A, VG
--5 I D=
0
, VG 0mA
--4 S=
.0V
60
80
100
120
140
160
Gate-to-Source Voltage, VGS - V
10
yfs -- ID
IT00782
Ambient Temperature, Ta - C
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01
IT00783
[MOSFET] VDS=--10V
IF -- VSD
Forward Transfer Admittance, | yfs | - S
7 5 3 2
[MOSFET] VGS = 0
1.0 7 5 3 2 0.1 --0.01
=-Ta
25
C
C 25
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Drain Current, ID - A
5 3
7 --10 IT00784 1000 7 5
5
0
--0.2
--0.4
Ta=75
C 25C --25C
--0.6 --0.8
C 75
Forward Current, IF - A
--1.0
--1.2
--1.4
SW Time -- ID
[MOSFET] VDD=--10V VGS=--4V Ciss, Coss, Crss - pF
Diode Forward Voltage, VSD - V IT00785 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz
Switching Time, SW Time - ns
2 100 7 5 3 2 10 7 5 3 2 3 5 7 --0.1 2 3 5
tr tf
3 2
100 7 5 3
Ciss Coss
td(on)
Crss
td(off)
7 --1.0 2 3 5
2
10 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Drain Current, ID - A
IT00786
Drain-to-Source Voltage, VDS - V
IT00787
No.6419-3/5
CPH6801
--10 --9
VGS -- Qg
VDS=--10V ID=--1A
[MOSFET]
--10 7 5 3 2
ASO
IDP=--4.0A
[MOSFET] 100s 1m s 10 ms
Gate-to-Source Voltage, VGS - V
--8
Drain Current, ID - A
--7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
--1.0 7 5 3 2 --0.1 7 5 3 2
ID=--1.0A
DC
10
Operation in this area is limited by RDS(on).
s op era tio n
0m
Total Gate Charge, Qg - nC
1.2
--0.01 --0.1
Ta=25C Single pulse Mounted on a ceramic board (600mm2x0.8mm)
2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
IT00788
Drain-to-Source Voltage, VDS - V
5 3
IT00790
PD -- Ta
[MOSFET]
IF -- VF
[SBD]
Allowable Power Dissipation, PD - W
1.0 0.9 0.8
2
M
Forward Current, IF - A
ou
1.0 7 5 3
nte
do
na
=1 Ta
C 25
25
C
0.4
ard
10
(6
0.1
2
x0
0.2
.8m
m)
140 160
3 2 0.01
0 0 20 40 60 80 100 120
0
0.1
0.2
75 C
00
mm
7 5
50
0.3
C
ic
bo
0
2
C
0.6
ce
ram
0.4
0.5 IT00622
Ambient Temperature, Ta - C
100 7 5 3 2
IT00789
Forward Voltage, VF - V
Average Forward Power Dissipation, PF(AV) -- W
0.8
IR -- VR
Ta=125C
100C
[SBD]
PF(AV) -- IO
Rectangular wave =60
[SBD]
0.7 Rectangular wave =120 Rectangular wave =180 0.6 Sine wave =180 0.5 0.4 0.3 0.2 Sine wave 0.1 0 0 0.2 0.4 0.6 0.8 180 360 1.0 Rectangular wave 360
Reverse Current, IR - mA
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 5
75C
50C
25C
0.01 10 15 IT00623
1.2
1.4 IT00624
Reverse Voltage, VR - V
1000 7 5
Average Forward Current, IO -- A
12
C -- VR
[SBD] f=1MHz
Surge Forward Current, IS (Peak) - A
IS -- t [SBD] Current waveform 50Hz sine wave
Is 20ms t
Interterminal Capacitance, C - pF
3 2 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 10 2 3 IT00625
10
8
6
4
2
0 7 0.01 2 3 5 7 0.1 2 3 5
Reverse Voltage, VR - V
Time, t - s
7 1.0
2
3
IT00626
No.6419-4/5
CPH6801
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.
PS No.6419-5/5

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